The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2014

Filed:

Feb. 03, 2012
Applicants:

Shogo Furuya, Yokohama, JP;

Hirofumi Yamashita, Kawasaki, JP;

Tetsuya Yamaguchi, Yokohama, JP;

Inventors:

Shogo Furuya, Yokohama, JP;

Hirofumi Yamashita, Kawasaki, JP;

Tetsuya Yamaguchi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/101 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14641 (2013.01); H01L 27/1464 (2013.01); H01L 27/14603 (2013.01); H01L 27/1461 (2013.01); H01L 27/14612 (2013.01);
Abstract

According to one embodiment, a solid-state imaging device includes a first element formation region surrounded by an element isolation region in a semiconductor substrate having a first and a second surface, an upper element isolation layer on the first surface in the element formation region, a lower element isolation layer between the second surface and the upper element isolation layer, a first photodiode in the element formation region, a floating diffusion in the element formation region, and a first transistor disposed between the first photodiode and the floating diffusion. A side surface of the lower element isolation layer protrudes closer to the transistor than a side surface of the upper element isolation layer.


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