The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Apr. 22, 2011
Shintaro Kubo, Higashiomi, JP;
Shuji Nakazawa, Gyeonggi-do, KR;
Rui Kamada, Higashiomi, JP;
Seiji Oguri, Higashiomi, JP;
Shinnosuke Ushio, Higashiomi, JP;
Shuichi Kasai, Kagoshima, JP;
Seiichiro Inai, Omihachiman, JP;
Shintaro Kubo, Higashiomi, JP;
Shuji Nakazawa, Gyeonggi-do, KR;
Rui Kamada, Higashiomi, JP;
Seiji Oguri, Higashiomi, JP;
Shinnosuke Ushio, Higashiomi, JP;
Shuichi Kasai, Kagoshima, JP;
Seiichiro Inai, Omihachiman, JP;
KYOCERA Corporation, Kyoto, JP;
Abstract
It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.