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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8916881 B1

PDFFull Text
Date of Patent:
Dec. 23, 2014

Filed:

Sep. 10, 2013

Semiconductor device and method for manufacturing semiconductor device

Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Naoko Yanase, Tokyo, JP;

Shingo Masuko, Kanagawa, JP;

Takaaki Yasumoto, Kanagawa, JP;

Ryoichi Ohara, Tokyo, JP;

Yorito Kakiuchi, Kanagawa, JP;

Takao Noda, Kanagawa, JP;

Kenya Sano, Kanagawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Attorney:

Patterson & Sheridan, LLP

Primary Examiner:

Dao H Nguyen

Assistant Examiner:

Tram H Nguyen

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 21/04 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/04 (2013.01); H01L 29/1608 (2013.01); H01L 29/0619 (2013.01); H01L 29/8611 (2013.01); H01L 29/45 (2013.01); H01L 29/7802 (2013.01); H01L 29/66068 (2013.01); H01L 21/0485 (2013.01); H01L 29/402 (2013.01); H01L 21/046 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.

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