The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Oct. 18, 2013
National Sun Yat-sen University, Kaohsiung, TW;
I-Kai Lo, Kaohsiung, TW;
Yu-Chi Hsu, Kaohsiung, TW;
Cheng-Hung Shih, Kaohsiung, TW;
Wen-Yuan Pang, Kaohsiung, TW;
Ming-Chi Chou, Kaohsiung, TW;
National Sun Yat-Sen University, Kaohsiung, TW;
Abstract
An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer. A method for manufacturing the III-nitride quantum well structure and a light-emitting unit having a plurality of III-nitride quantum well structures are also proposed.