The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Jul. 25, 2014
Applicants:
Karin Chaudhari, Briarcliff Manor, NY (US);
Ashok Chaudhari, Briarcliff Manor, NY (US);
Pia Chaudhari, Briarcliff Manor, NY (US);
Inventors:
Praveen Chaudhari, Briarcliff Manor, NY (US);
Jifeng Liu, Hanover, NH (US);
Assignees:
Solar Tectic LLC, Briarcliff Manor, NY (US);
Trustees of Dartmouth College, Hanover, NH (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/02 (2006.01); C03B 29/06 (2006.01);
U.S. Cl.
CPC ...
C03B 13/24 (2013.01); H01L 21/02636 (2013.01); C03B 13/34 (2013.01); C03B 29/06 (2013.01);
Abstract
Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays.