logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8916455 B1

PDFFull Text
Date of Patent:
Dec. 23, 2014

Filed:

Jul. 25, 2014

Method of growing heteroepitaxial single crystal or large grained semiconductor films on glass substrates and devices thereon

Applicants:

Karin Chaudhari, Briarcliff Manor, NY (US);

Ashok Chaudhari, Briarcliff Manor, NY (US);

Pia Chaudhari, Briarcliff Manor, NY (US);

Inventors:

Praveen Chaudhari, Briarcliff Manor, NY (US);

Jifeng Liu, Hanover, NH (US);

Assignees:

Solar Tectic LLC, Briarcliff Manor, NY (US);

Trustees of Dartmouth College, Hanover, NH (US);

Attorneys:

Keith D. Nowak

Libby Babu Varghese

Carter Ledyard & Milburn, LLP

Primary Examiner:

Charles Garber

Assistant Examiner:

Brigitte Paterson

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/02 (2006.01); C03B 29/06 (2006.01);
U.S. Cl.
CPC ...
C03B 13/24 (2013.01); H01L 21/02636 (2013.01); C03B 13/34 (2013.01); C03B 29/06 (2013.01);
Abstract

Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays.

Find Patent Forward Citations

Quick Actions:

Chaudhari, Praveen. (2014). Method of growing heteroepitaxial single crystal or large grained semiconductor films on glass substrates and devices thereon (U.S. Patent No. 8916455). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8916455

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…