The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Feb. 24, 2014
Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
The semiconductor device includes a first transistor including a first impurity layer of a first conductivity type formed in a first region of a semiconductor substrate, a first epitaxial semiconductor layer formed above the first impurity layer, a first gate insulating film formed above the first epitaxial semiconductor layer, and a first gate electrode formed above the first gate insulating film, and a second transistor including a second impurity layer of the second conductivity type formed in a second region of the semiconductor substrate, a second epitaxial semiconductor layer formed above the second impurity layer and having a thickness different from that of the first epitaxial semiconductor layer, a second gate insulating film formed above the second epitaxial semiconductor layer and having a film thickness equal to that of the first gate insulating film and a second gate electrode formed above the second gate insulating film.