The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 23, 2014

Filed:

Feb. 03, 2011
Applicants:

Ewald K. M. Günther, Regenstauf, DE;

Mathias Kämpf, Burglengenfeld, DE;

Jens Dennemarck, Regensburg, DE;

Nikolaus Gmeinwieser, Obertraubling, DE;

Inventors:

Ewald K. M. Günther, Regenstauf, DE;

Mathias Kämpf, Burglengenfeld, DE;

Jens Dennemarck, Regensburg, DE;

Nikolaus Gmeinwieser, Obertraubling, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/08 (2010.01); H01L 27/15 (2006.01); H01L 21/78 (2006.01); B28D 5/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/153 (2013.01); H01L 21/78 (2013.01); B28D 5/0011 (2013.01);
Abstract

A method for producing a plurality of optoelectronic semiconductor chips includes providing a carrier wafer having a first surface and a second surface opposite the first surface, wherein a plurality of individual component layer sequences spaced apart from one another in a lateral direction are applied on the first surface, the component layer sequences being separated from one another by separation trenches; introducing at least one crystal imperfection in at least one region of the carrier wafer which at least partly overlaps a separation trench in a vertical direction; singulating the carrier wafer along the at least one crystal imperfection into individual semiconductor chips.


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