The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Jun. 17, 2013
Applicant:
California Institute of Technology, Pasadena, CA (US);
Inventors:
Risaku Toda, Pasadena, CA (US);
Michael J. Bronikowski, Altadena, CA (US);
Edward M. Luong, Pasadena, CA (US);
Harish Manohara, Arcadia, CA (US);
Assignee:
California Institute of Technology, Pasadena, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01J 3/02 (2006.01); H01J 1/304 (2006.01); B82Y 10/00 (2011.01); B82Y 20/00 (2011.01); H01J 9/02 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/302 (2013.01); H01J 3/022 (2013.01); H01J 1/3042 (2013.01); B82Y 10/00 (2013.01); B82Y 20/00 (2013.01); H01J 1/3044 (2013.01); H01J 3/021 (2013.01); H01J 9/025 (2013.01); H01J 2203/0224 (2013.01); B82Y 40/00 (2013.01); Y10S 977/842 (2013.01); Y10S 977/939 (2013.01);
Abstract
A carbon nanotube field emission device with overhanging gate fabricated by a double silicon-on-insulator process. Other embodiments are described and claimed.