The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Dec. 28, 2001
Applicants:
Osamu Fukunaga, Chiba, JP;
Hiroshi Okubo, Kagawa, JP;
Toshiaki Sogabe, Kagawa, JP;
Tetsuro Tojo, Kagawa, JP;
Inventors:
Osamu Fukunaga, Chiba, JP;
Hiroshi Okubo, Kagawa, JP;
Toshiaki Sogabe, Kagawa, JP;
Tetsuro Tojo, Kagawa, JP;
Assignee:
Toyo Tanso Co., Ltd., Osaka-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
C01B 31/04 (2006.01); C01B 31/36 (2006.01); C04B 35/645 (2006.01); B01J 3/06 (2006.01); B30B 11/00 (2006.01); C04B 35/52 (2006.01);
U.S. Cl.
CPC ...
C04B 35/645 (2013.01); B01J 3/062 (2013.01); B01J 3/065 (2013.01); B01J 3/067 (2013.01); B30B 11/004 (2013.01); B30B 11/007 (2013.01); C04B 35/52 (2013.01); C04B 35/522 (2013.01); B01J 2203/061 (2013.01); B01J 2203/0655 (2013.01); C04B 2235/421 (2013.01); C04B 2235/425 (2013.01); C04B 2235/427 (2013.01); C04B 2235/72 (2013.01); C04B 2235/77 (2013.01); C04B 2235/96 (2013.01); C04B 2235/9607 (2013.01);
Abstract
A method for producing a semiconductor diamond containing boron by the high pressure synthesis method, wherein a graphite material to be converted to the semiconductor diamond is mixed with boron or a boron compound, formed and fired, in such a way that the resultant graphite material contains a boron component uniformly dispersed therein and has an enhanced bulk density, a high purity and a reduced content of hydrogen.