The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Jun. 20, 2012
Yoshiaki Kawamonzen, Tokyo, JP;
Yasuaki Ootera, Yokohama, JP;
Akiko Yuzawa, Kawasaki, JP;
Naoko Kihara, Kawasaki, JP;
Yoshiyuki Kamata, Tokyo, JP;
Hiroyuki Hieda, Yokohama, JP;
Norikatsu Sasao, Tokyo, JP;
Ryosuke Yamamoto, Kawasaki, JP;
Takeshi Okino, Yokohama, JP;
Tomoyuki Maeda, Kawasaki, JP;
Takuya Shimada, Yokohama, JP;
Yoshiaki Kawamonzen, Tokyo, JP;
Yasuaki Ootera, Yokohama, JP;
Akiko Yuzawa, Kawasaki, JP;
Naoko Kihara, Kawasaki, JP;
Yoshiyuki Kamata, Tokyo, JP;
Hiroyuki Hieda, Yokohama, JP;
Norikatsu Sasao, Tokyo, JP;
Ryosuke Yamamoto, Kawasaki, JP;
Takeshi Okino, Yokohama, JP;
Tomoyuki Maeda, Kawasaki, JP;
Takuya Shimada, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A pattern forming method according to an embodiment includes: forming a pattern film on a first substrate, the pattern film having a concave-convex pattern, the pattern film being made of a material containing a first to-be-imprinted agent; forming a material film on a second substrate, the material film containing a second to-be-imprinted agent having a higher etching rate than an etching rate of the first to-be-imprinted agent; transferring the concave-convex pattern of the pattern film onto the material film by applying pressure between the first substrate and the second substrate, with the pattern film being positioned to face the material film, and by curing the second to-be-imprinted agent; detaching the first substrate from the pattern film; and removing the material film by etching, to leave the pattern film on the second substrate.