The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2014

Filed:

Oct. 26, 2012
Applicants:

Sayeed A. Badrudduza, Austin, TX (US);

Glenn C. Abeln, Buda, TX (US);

Inventors:

Sayeed A. Badrudduza, Austin, TX (US);

Glenn C. Abeln, Buda, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory including an array of memory cells, word lines, and voltage supply lines. Each voltage supply line of the plurality of voltage supply lines is coupled to a first voltage supply terminal of a subset of memory cells of subsets of memory cells of the array. Each memory cell of the array is coupled to a word line. The memory includes a row decoder that controls a voltage on each of the word lines and controls a voltage on each of the voltage supply lines. The row decoder provides a low voltage state voltage on one of the voltage supply lines during a write operation to a subset of memory cells coupled to the voltage supply line and the row decoder provides a high voltage state voltage to the voltage supply line during a read operation of the subset of the memory cells.


Find Patent Forward Citations

Badrudduza, Sayeed. (2014). Sram with improved write operation (U.S. Patent No. 8913456). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8913456

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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