The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Mar. 01, 2011
Applicants:
Noren Pan, Wilmette, IL (US);
Andree Wibowo, Des Plaines, IL (US);
Inventors:
Noren Pan, Wilmette, IL (US);
Andree Wibowo, Des Plaines, IL (US);
Assignee:
MicroLink Devices, Inc., Niles, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/082 (2006.01); H01L 29/08 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0817 (2013.01); H01L 29/0821 (2013.01); H01L 29/7371 (2013.01);
Abstract
A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage V. The improvement of the on-state breakdown voltage for the HBT improves the output power characteristics of the HBT and the ability of the HBT to withstand large impedance mismatch (large VSWR). The improvement in the on-state breakdown voltage is related to the suppression of high electric fields adjacent a junction of a collector layer and a sub-collector layer forming a collector region of the HBT.