The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2014

Filed:

May. 31, 2013
Applicants:

Han-chi Liu, Hsin-Chu, TW;

Huan-kun Pan, Hsin-Chu, TW;

Eiichi Okamoto, Hsin-Chu, TW;

Inventors:

Han-Chi Liu, Hsin-Chu, TW;

Huan-Kun Pan, Hsin-Chu, TW;

Eiichi Okamoto, Hsin-Chu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/00 (2006.01); H01L 31/0248 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0248 (2013.01);
Abstract

The present invention provides an ultra-violet light sensing device. The ultra-violet light sensing device includes a first conductivity type substrate, a second conductivity type region, and a first conductivity type high density region. The first conductivity type substrate includes a light incident surface. The second conductivity type region is disposed in the first conductivity type substrate and adjacent to the light incident surface. The first conductivity type high density region is disposed under the second conductivity type region. The present invention also provides another ultra-violet light sensing device, which further includes a first conductivity type high density shallow region which is sandwiched between the light incident surface and the second conductivity type region. Manufacturing methods for these ultra-violet light sensing devices are also disclosed in the present invention.


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