The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2014

Filed:

Jun. 12, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventor:

Toru Matsuda, Mie-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66833 (2013.01); H01L 27/1157 (2013.01); H01L 29/792 (2013.01); H01L 27/11582 (2013.01); H01L 29/7926 (2013.01);
Abstract

According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method includes forming a second stacked body on the planarized interlayer insulating film and on the uppermost stair. The second stacked body includes a second conductive film thicker than the first conductive film and a second insulating film stacked on the second conductive film. The method includes dividing the second stacked body into a select gate on the uppermost stair and a plurality of wall portions in a staircase region below the uppermost stair. The method includes forming a plurality of vias piercing the interlayer insulating film under a region between the wall portions and reaching the first conductive film of each of the stairs.


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