The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
May. 15, 2012
Applicant:
Yuichi Hirano, Kanagawa, JP;
Inventor:
Yuichi Hirano, Kanagawa, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 27/115 (2006.01); H01L 21/28 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11573 (2013.01); H01L 29/7843 (2013.01); H01L 29/4234 (2013.01); H01L 29/6659 (2013.01); H01L 29/6653 (2013.01); H01L 29/7833 (2013.01); H01L 29/66833 (2013.01); H01L 29/665 (2013.01); H01L 21/28282 (2013.01); H01L 29/792 (2013.01); H01L 21/823807 (2013.01); H01L 21/823864 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate having a main surface, a MONOS-type memory cell formed over the main surface and having a channel, an n-channel transistor formed over the main surface, and a p-channel transistor formed over the man surface. Nitride films are formed in a manner to contact the top surfaces of the MONOS-type memory cell, the n-channel transistor, and the p-channel transistor. The nitride films apply stress to the channels of the MONOS-type memory cell, the n-channel transistor, and the p-channel transistor.