The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Mar. 13, 2013
Applicant:
Analog Devices, Inc., Norwood, MA (US);
Inventor:
Mark D. Reisiger, San Jose, CA (US);
Assignee:
Analog Devices, Inc., Norwood, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0288 (2013.01);
Abstract
An integrated circuit device comprises a common-gated dual-oxide MOSFET including a protective device and a MOSFET. A common gate electrode serves as a gate electrode of the protective device and as a gate of the MOSFET. The protective device comprises a first gate dielectric having a first thickness over a first channel region and the MOSFET comprises a second gate dielectric thicker than the first gate dielectric over a second channel region. During a plasma process, a first current can flow through the first dielectric that is higher than a second current through the second dielectric.