The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Aug. 02, 2010
Shunpei Yamazaki, Setagaya, JP;
Junichiro Sakata, Atsugi, JP;
Miyuki Hosoba, Isehara, JP;
Eriko Nishida, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Junichiro Sakata, Atsugi, JP;
Miyuki Hosoba, Isehara, JP;
Eriko Nishida, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
One object of the present invention is to increase an aperture ratio of a semiconductor device. A pixel portion and a driver circuit are provided over one substrate. The first thin film transistor (TFT) in the pixel portion includes: a gate electrode layer over the substrate; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain electrode layers over the oxide semiconductor layer; over the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, a protective insulating layer which is in contact with part of the oxide semiconductor layer; and a pixel electrode layer over the protective insulating layer. The pixel portion has light-transmitting properties. Further, a material of source and drain electrode layers of a second TFT in the driver circuit is different from a material of those of the first TFT.