The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Apr. 22, 2011
Hironori Wakana, Hitachi, JP;
Tetsufumi Kawamura, Kodaira, JP;
Hiroyuki Uchiyama, Musashimurayama, JP;
Kuniharu Fujii, Tsukuba, JP;
Hironori Wakana, Hitachi, JP;
Tetsufumi Kawamura, Kodaira, JP;
Hiroyuki Uchiyama, Musashimurayama, JP;
Kuniharu Fujii, Tsukuba, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Disclosed is an oxide semiconductor layer () which forms a channel for a thin-film transistor and which includes at least In and oxygen and one or more types of elements from among Zn, Cd, Al, Ga, Si, Sn, Ce, and Ge. A high concentration region () is disposed on one section of the oxide semiconductor layer (), whereby said region has a maximum In concentration 30 at %; or higher than other regions on the oxide semiconductor layer (). The film thickness of the oxide semiconductor layer () is 100 nm max., and the film thickness of the high concentration region () is 20 nm max. or, preferably, 6 nm max. This enables a thin-film transistor with a sub-threshold slope of 100 mV/decade max., a high on-current, and a high field effect mobility to be achieved.