The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Jun. 09, 2011
Wan-joo Maeng, Yongin-si, KR;
Myung-kwan Ryu, Yongin-si, KR;
Tae-sang Kim, Seoul, KR;
Joon-seok Park, Seongnam-si, KR;
Wan-joo Maeng, Yongin-si, KR;
Myung-kwan Ryu, Yongin-si, KR;
Tae-sang Kim, Seoul, KR;
Joon-seok Park, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
An oxide transistor includes: a channel layer formed of an oxide semiconductor; a source electrode contacting a first end portion of the channel layer; a drain electrode contacting a second end portion of the channel layer; a gate corresponding to the channel layer; and a gate insulating layer disposed between the channel layer and the gate. The oxide semiconductor includes hafnium-indium-zinc-oxide (HfInZnO). An electrical conductivity of a back channel region of the channel layer is lower than an electrical conductivity of a front channel region of the channel layer.