The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2014

Filed:

Jul. 15, 2013
Applicant:

Georgia Tech Research Corporation, Atlanta, GA (US);

Inventors:

Lauren E. Polander, Atlanta, GA (US);

Shree Prakash Tiwari, Atlanta, GA (US);

Seth Marder, Atlanta, GA (US);

Bernard Kippelen, Decatur, GA (US);

Raghunath R. Dasari, Atlanta, GA (US);

Yulia A. Getmanenko, Atlanta, GA (US);

Do Kyung Hwang, Duluth, GA (US);

Mathieu Fenoll, Atlanta, GA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0072 (2013.01); H01L 51/0067 (2013.01); H01L 51/0074 (2013.01); H01L 51/0068 (2013.01); H01L 51/0071 (2013.01);
Abstract

The various inventions and/or their embodiments disclosed herein relate to certain naphthalene diimide (NDI) compounds wherein the NDI groups are bonded to certain subclasses of bridging heteroaryl (hAr) groups, such as the 'NDI-hAr-NDI' oligomeric compounds, wherein hAr is a heteroaryl group chosen to provide desirable electronic and steric properties, and the possible identities of the 'R' terminal peripheral substituent groups are described herein. Transistor and inverter devices can be prepared.


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