The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2014

Filed:

Jan. 11, 2013
Applicant:

Solar Junction Corp., San Jose, CA (US);

Inventors:

Rebecca Elizabeth Jones, Mountain View, CA (US);

Homan Bernard Yuen, Sunnyvale, CA (US);

Ting Liu, Santa Clara, CA (US);

Pranob Misra, Milpitas, CA (US);

Assignee:

Solar Junction Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 21/00 (2006.01); H01L 31/0304 (2006.01); C22C 28/00 (2006.01); H01L 31/0735 (2012.01); H01L 31/18 (2006.01); H01L 31/078 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0304 (2013.01); C22C 28/00 (2013.01); H01L 31/0735 (2013.01); H01L 31/1848 (2013.01); H01L 31/03048 (2013.01); H01L 31/078 (2013.01); Y02E 10/544 (2013.01);
Abstract

An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, GaInNAsSbwith a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for GaInNAsSbare 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.


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