The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Sep. 29, 2010
Ken-ichi Okada, Higashiomi, JP;
Norikazu Nakatani, Higashiomi, JP;
Naoya Kobamoto, Higashiomi, JP;
Hiroshi Ueda, Higashiomi, JP;
Ken-ichi Okada, Higashiomi, JP;
Norikazu Nakatani, Higashiomi, JP;
Naoya Kobamoto, Higashiomi, JP;
Hiroshi Ueda, Higashiomi, JP;
KYOCERA Corporation, Kyoto, JP;
Abstract
A semiconductor substrate comprises a semiconductor region of one conductivity type and a layer of another conductivity type with first, second and side surfaces. Over surfaces on the first surface side, the side surface side and an outer peripheral portion on the second surface side of the semiconductor region, the layer is formed. An electrode of the one conductivity type is located on the second surface adjacent to the layer. The semiconductor substrate includes a trench located between the outer periphery of the second surface and an end of the electrode with a spacing from the electrode and configured to isolate the layer along the outer periphery of the second surface. When viewed from the second surface side, a shortest distance between the end of the electrode and the trench is smaller than a shortest distance between a junction of the layer of the side surface side and the trench.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile