The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Feb. 21, 2013
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventor:
Fumio Sasaki, Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/68 (2006.01); H01L 21/285 (2006.01); H01L 29/423 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/68 (2013.01); H01L 21/28 (2013.01); H01L 21/28581 (2013.01); H01L 21/28587 (2013.01); H01L 29/42316 (2013.01); H01L 29/475 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract
A semiconductor device has a gate electrode including a leg part and a canopy part. A barrier layer is formed on a bottom face of the leg part of the gate electrode. In addition, on the lower surface of the barrier layer, a Schottky metal layer with an electrode width wider than the electrode width of the barrier layer is formed to have a Schottky junction with a semiconductor layer.