The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Jul. 27, 2012
Applicants:
Young-ho Lee, Icheon-si, KR;
Seung-joon Jeon, Icheon-si, KR;
Tae-hang Ahn, Icheon-si, KR;
Inventors:
Assignee:
Hynix Semiconductor Inc., Icheon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/165 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 29/7834 (2013.01); H01L 29/66636 (2013.01); H01L 29/165 (2013.01); H01L 29/0847 (2013.01);
Abstract
A semiconductor device includes: a gate pattern over a substrate; recess patterns provided in the substrate at both sides of the gate pattern, each having a side surface extending below the gate pattern; and a source and a drain filling the recess patterns, and forming a strained channel under the gate pattern.
Lee, Young-Ho. (2014). Semiconductor device with strained channel and method of fabricating the same (U.S. Patent No. 8912068). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8912068
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile