The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Mar. 17, 2010
Applicants:
Tsuneo Uenaka, Mie-ken, JP;
Kazuyuki Higashi, Kanagawa-ken, JP;
Inventors:
Tsuneo Uenaka, Mie-ken, JP;
Kazuyuki Higashi, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/20 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2006.01); H01L 29/792 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11578 (2013.01); H01L 29/66833 (2013.01); H01L 29/7926 (2013.01); H01L 21/28282 (2013.01); H01L 29/792 (2013.01); H01L 27/11582 (2013.01); H01L 27/11573 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes: forming a first layer on a substrate; forming a first contact hole in the first layer; burying a sacrificial film in the first contact hole; forming a second layer on the first layer and the first contact hole after burying; forming a second contact hole reaching the sacrificial film in the second layer; removing the sacrificial film from the first contact hole via the second contact hole; and providing a contact electrode in the first contact hole and the second contact hole.