The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2014

Filed:

May. 03, 2012
Applicants:

Hussein S. El-ghoroury, Carlsbad, CA (US);

Chih-li Chuang, San Diego, CA (US);

Kameshwar Yadavalli, Carlsbad, CA (US);

Qian Fan, Carlsbad, CA (US);

Inventors:

Hussein S. El-Ghoroury, Carlsbad, CA (US);

Chih-Li Chuang, San Diego, CA (US);

Kameshwar Yadavalli, Carlsbad, CA (US);

Qian Fan, Carlsbad, CA (US);

Assignee:

Ostendo Technologies, Inc., Carlsbad, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/18 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14618 (2013.01); H01L 21/187 (2013.01); H01L 27/14683 (2013.01);
Abstract

Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface. The methods incorporate the formation of both electrical and optical interconnect vias within the wafer bonding interface to transfer electrical and optical signals between the bonded wafers. The electrical vias are formed using multiplicity of metal posts each comprised of multiple layers of metal that are interfused across the bonding surface. The optical vias are formed using multiplicity of optical waveguides each comprised of a dielectric material that interfuses across the bonding interface and having an index of refraction that is higher than the index of refraction of the dielectric intermediary bonding layer between the bonded wafers. The electrical and optical vias are interspersed across the bonding surface between the bonded wafers to enable uniform transfer of both electrical and optical signals between the bonded wafers.


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