The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8909021 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 09, 2014

Filed:

Feb. 01, 2010
Applicants:

Shinichi Saito, Kawasaki, JP;

Masahiro Aoki, Kokubunji, JP;

Toshiki Sugawara, Kokubunji, JP;

Inventors:

Shinichi Saito, Kawasaki, JP;

Masahiro Aoki, Kokubunji, JP;

Toshiki Sugawara, Kokubunji, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/00 (2006.01); G02B 6/36 (2006.01); H01S 5/30 (2006.01); G02F 1/225 (2006.01); H01S 5/02 (2006.01); G02B 6/122 (2006.01); B82Y 20/00 (2011.01); G02B 6/12 (2006.01); G02F 1/21 (2006.01); H01S 5/042 (2006.01); H01S 5/32 (2006.01); H01S 5/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/122 (2013.01); H01S 5/3027 (2013.01); G02F 1/2257 (2013.01); H01S 5/021 (2013.01); G02F 2202/06 (2013.01); G02B 2006/12097 (2013.01); G02F 2202/105 (2013.01); G02F 2202/09 (2013.01); G02F 2001/212 (2013.01); H01S 5/0424 (2013.01); H01S 5/3202 (2013.01); B82Y 20/00 (2013.01); G02F 2203/06 (2013.01); G02B 2006/12178 (2013.01); G02F 2201/12 (2013.01); H01S 5/12 (2013.01); G02F 1/218 (2013.01);
Abstract

Disclosed is a silicon optical waveguide having a small optical loss and no polarization dependency. The silicon optical waveguide is formed on a silicon substrate with an embedded oxide film therebetween, the plane orientation of the surface of the silicon optical waveguide is the (110) plane, the plane orientation of the side wall is the (111) plane, and the recesses and projections of the side wall are planarized at an atomic level.


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