The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Mar. 10, 2010
Adrian Avramescu, Regensburg, DE;
Désirée Queren, Neutraubling, DE;
Christoph Eichler, Tegernheim, DE;
Matthias Sabathil, Regensburg, DE;
Stephan Lutgen, Dresden, DE;
Uwe Strauss, Bad Abbach, DE;
Adrian Avramescu, Regensburg, DE;
Désirée Queren, Neutraubling, DE;
Christoph Eichler, Tegernheim, DE;
Matthias Sabathil, Regensburg, DE;
Stephan Lutgen, Dresden, DE;
Uwe Strauss, Bad Abbach, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Abstract
In at least one embodiment of the optoelectronic semiconductor chip (), the latter is based on a nitride material system and comprises at least one active quantum well (). The at least one active quantum well () is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well () comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip (), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well () have mutually different average indium contents c. Furthermore the at least one active quantum well () fulfills the condition:40≦∫()−2.5−1.5∫≦80.