The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
May. 17, 2013
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Sony Corporation, Tokyo, JP;
Masaki Ueno, Itami, JP;
Koji Katayama, Osaka, JP;
Takatoshi Ikegami, Osaka, JP;
Takao Nakamura, Itami, JP;
Katsunori Yanashima, Kanagawa, JP;
Hiroshi Nakajima, Kanagawa, JP;
Sumitomo Electric Industries, Ltd., Osaka-Shi, JP;
Sony Corporation, Tokyo, JP;
Abstract
A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a <0001> axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm.