The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

May. 16, 2012
Applicants:

Kui-yon Mun, Hwaseong-si, KR;

Min-chul Kim, Suwon-si, KR;

Sungwoo Kim, Seongnam-si, KR;

Inventors:

Kui-Yon Mun, Hwaseong-si, KR;

Min-Chul Kim, Suwon-si, KR;

Sungwoo Kim, Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/56 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 11/5678 (2013.01); G11C 11/5685 (2013.01); G11C 13/0002 (2013.01); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0033 (2013.01); G11C 13/0035 (2013.01); G11C 13/004 (2013.01); G11C 13/0061 (2013.01); G11C 13/0069 (2013.01);
Abstract

An elapsed time with respect to a programming operation on a memory cell of a nonvolatile memory is determined, a read voltage is adjusted based on the determined elapsed time and a read operation is performed on the memory cell using the adjusted read voltage. Determining the elapsed time may be preceded by performing the programming operation in response to a first access request and determining the elapsed time may include determining the elapsed time in response to a second access request. Memory systems supporting such operations are also described.


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