The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Nov. 19, 2013
Applicants:

Institut National DE LA Recherche Scientifique (Inrs), Quebec, CA;

Mpb Communications Inc., Pointe-Claire, CA;

Inventors:

Ali Hendaoui, Saint-Leonard, CA;

Mohamed Chaker, Montreal, CA;

Emile Haddad, Montreal, CA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/01 (2006.01); G02F 1/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is described a passive variable emittance device comprising: a substrate having a receiving surface adapted to reflect radiations having a given wavelength; an intermediary layer deposited on the receiving surface of the substrate and being substantially transparent to the radiations having the given wavelength; and a thermochromic layer deposited on top of the intermediary layer, the thermochromic layer being substantially transparent to the radiations having the given wavelength for a first temperature below a given transition temperature, and presenting both reflection and absorption for the radiations for a second temperature above the given transition temperature, a total optical thickness for the intermediary and thermochromic layers being substantially equal to one quarter of the given wavelength so that radiations reflected by the thermochromic layer at the second temperature destructively interfere with radiations transmitted by the thermochromic and intermediary layers and reflected by the substrate in order to obtain a first emittance for the passive variable emittance device at the second temperature being greater than a second emittance for the passive variable emittance device at the first temperature.


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