The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Aug. 25, 2011
Applicants:
Brent S. Krusor, Fremont, CA (US);
Christopher L. Chua, San Jose, CA (US);
Thomas Wunderer, Palo Alto, CA (US);
Noble M. Johnson, Menlo Park, CA (US);
Bowen Cheng, Atherton, CA (US);
Inventors:
Brent S. Krusor, Fremont, CA (US);
Christopher L. Chua, San Jose, CA (US);
Thomas Wunderer, Palo Alto, CA (US);
Noble M. Johnson, Menlo Park, CA (US);
Bowen Cheng, Atherton, CA (US);
Assignee:
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 11/28 (2006.01); G01J 3/00 (2006.01); H01L 21/66 (2006.01); G01R 31/26 (2006.01); C23F 1/00 (2006.01); H01L 21/67 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); H01L 22/12 (2013.01); H01L 21/67086 (2013.01); H01L 21/67253 (2013.01); H01L 33/0079 (2013.01);
Abstract
Approaches for substantially removing bulk aluminum nitride (AlN) from one or more layers epitaxially grown on the bulk AlN are discussed. The bulk AlN is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AlN can be measured and used to control etching.