The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Mar. 07, 2010
An-thung Cho, Hsin-Chu, TW;
Chia-tien Peng, Hsin-Chu, TW;
Hung-wei Tseng, Hsin-Chu, TW;
Cheng-chiu Pai, Hsin-Chu, TW;
Yu-hsuan LI, Hsin-Chu, TW;
Chun-hsiun Chen, Hsin-Chu, TW;
Wei-ming Huang, Hsin-Chu, TW;
An-Thung Cho, Hsin-Chu, TW;
Chia-Tien Peng, Hsin-Chu, TW;
Hung-Wei Tseng, Hsin-Chu, TW;
Cheng-Chiu Pai, Hsin-Chu, TW;
Yu-Hsuan Li, Hsin-Chu, TW;
Chun-Hsiun Chen, Hsin-Chu, TW;
Wei-Ming Huang, Hsin-Chu, TW;
AU Optronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The present invention provides a photo sensor, a method of forming the photo sensor, and a related optical touch device. The photo sensor includes a first electrode, a second electrode, a first silicon-rich dielectric layer and a second silicon-rich dielectric layer. The first silicon-rich dielectric layer is disposed between the first electrode and the second electrode for sensing infrared rays, and the second silicon-rich dielectric layer is disposed between the first silicon-rich dielectric layer and the second electrode for sensing visible light beams. The multi-layer structure including the first silicon-rich dielectric layer and the second silicon-rich dielectric layer enables the single photo sensor to effectively detect both infrared rays and visible light beams. Moreover, the single photo sensor is easily integrated into an optical touch device to form optical touch panel integrated on glass.