The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Feb. 14, 2013
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Jun Zhu, ShangHai, CN;

Robert Gregory Wagoner, Salem, VA (US);

Huibin Zhu, Westford, MA (US);

Chengjun Wang, ShangHai, CN;

Assignee:

General Electric Company, Schenectady, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/56 (2006.01);
U.S. Cl.
CPC ...
H03K 17/56 (2013.01);
Abstract

A device includes a controller configured to regulate one or more voltages applied to a gate of an insulated gate bipolar transistor (IGBT). The controller is configured to receive one or more voltage values associated with the IGBT, and generate a gating signal and transmit the gating signal to the IGBT. The gating signal is configured to activate or deactivate the IGBT. The controller is configured to generate a voltage clamping signal and transmit the voltage clamping signal to activate or deactivate an active switching device. The active switching device is configured to periodically limit the one or more voltage values associated with the IGBT based at least in part on one or more characteristics of the voltage clamping signal.


Find Patent Forward Citations

Loading…