The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Feb. 07, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Kengo Uchida, Oita, JP;
Kazuyuki Higashi, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A first through holeand a second through holeare formed which penetrate from a rear surfaceside of an element formation surfaceof a semiconductor substrate (silicon substrate) in which an element section Ra is formed, to the element formation surface. An outer circumference insulation filmis formed on the side wall of the bottom of the second through holeto surround the outer circumference of the second through holehaving a larger opening diameter among these through holes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile