The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Jan. 15, 2007
Applicant:

Manabu Bonkohara, Tokyo, JP;

Inventor:

Manabu Bonkohara, Tokyo, JP;

Assignee:

Zycube Co., Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/552 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/561 (2013.01); H01L 2224/48091 (2013.01); H01L 2225/06541 (2013.01); H01L 2224/45144 (2013.01); H01L 23/3135 (2013.01); H01L 2924/01078 (2013.01); H01L 23/552 (2013.01); H01L 2225/06589 (2013.01); H01L 2225/0651 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/3025 (2013.01); H01L 2225/06527 (2013.01); H01L 2924/01019 (2013.01); H01L 2225/06513 (2013.01); H01L 24/48 (2013.01); H01L 25/50 (2013.01); H01L 2924/01004 (2013.01); H01L 2225/06582 (2013.01); H01L 2225/06586 (2013.01);
Abstract

A three-dimensional semiconductor integrated circuit device is provided. A first semiconductor chip includes a solid-state circuit and is smaller than a base, and is stacked on the base. The first chip is buried by a first filling material having approximately the same contour as the base. Buried electrodes that penetrate through the first chip along its thickness direction are formed in the first chip. A second semiconductor chip includes a solid-state circuit and is smaller than the base, and is stacked on the first chip. The second chip is buried by a second filling material having approximately the same contour as the base. Buried electrodes that penetrate through the second chip along its thickness direction are formed in the second chip. The first and second filling materials have processibilities required for forming the buried electrodes and thermal expansion coefficients equivalent to those of the first and second chips, respectively.


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