The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Mar. 20, 2008
Applicant:

Haiqing Wei, San Jose, CA (US);

Inventor:

Haiqing Wei, San Jose, CA (US);

Assignee:

Olambda, Inc., Los Altos, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/31 (2006.01); H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); Y10S 977/888 (2013.01);
Abstract

A method of fabricating integrated circuits is described. A multi-material hard mask is formed on an underlying layer to be patterned. In a first patterning process, portions of the first material of the hard mask are etched, the first patterning process being selective to etch the first material over the second material. In a second patterning process, portions of the second material of the hard mask are etched, the second patterning process being selective to etch the second material over the first material. The first and second patterning processes forming a desired pattern in the hard mask which is then transferred to the underlying layer.


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