The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Oct. 26, 2009
Applicants:

Tomoyuki Takahashi, Takasaki, JP;

Kentarou Morito, Takasaki, JP;

Yuichi Sasajima, Takasaki, JP;

Yoshinari Take, Takasaki, JP;

Inventors:

Tomoyuki Takahashi, Takasaki, JP;

Kentarou Morito, Takasaki, JP;

Yuichi Sasajima, Takasaki, JP;

Yoshinari Take, Takasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 27/01 (2006.01); H01G 4/008 (2006.01); H01G 4/224 (2006.01); H01G 4/33 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/016 (2013.01); H01G 4/008 (2013.01); H01G 4/224 (2013.01); H01G 4/33 (2013.01); H01L 28/75 (2013.01);
Abstract

Proposed are thin film MIM capacitors with which deterioration of insulating properties and leakage current properties can be sufficiently inhibited. Also proposed is a manufacturing method for the thin film MIM capacitors. For the thin film MIM capacitor (), a lower electrode (), a base metal thin film (), the dielectric thin film () and the upper electrode () are formed to approximately the same area. The lower electrode () has a configuration that differs from the other films to form a part for external connection. The side surface of the base metal thin film (), the dielectric thin film (), and the upper electrode () are covered with a base metal oxide () that comprises the same metal atoms as the base metal thin film ().


Find Patent Forward Citations

Loading…