The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Aug. 14, 2008
Applicant:
Hiroaki Takasu, Chiba, JP;
Inventor:
Hiroaki Takasu, Chiba, JP;
Assignee:
Seiko Instruments Inc., Chiba, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 27/0266 (2013.01);
Abstract
In order to suppress an off leak current of an off transistor for ESD protection, in an NMOS for ESD protection whose isolation region has a shallow trench structure, a drain region is placed apart from the shallow trench isolation region so as not to be in direct contact with the shallow trench isolation region in a region where the drain region of the NMOS transistor for ESD protection is adjacent to at least a gate electrode of the NMOS transistor for ESD protection.