The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Mar. 19, 2012
Applicant:

Hidetoshi Koike, Yokohama, JP;

Inventor:

Hidetoshi Koike, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14616 (2013.01); H01L 27/1461 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01);
Abstract

According to one embodiment, a solid-state imaging device includes a photodiode includes an N-type region and a P-type region, a floating diffusion region, and a transfer transistor. The N-type diffusion region of the photodiode comprises a first semiconductor region and a second semiconductor region formed shallower than the first semiconductor region. An end portion of the first semiconductor region is positioned on the floating diffusion region side rather than an end portion of a gate electrode of the transfer transistor. An end portion of the second semiconductor region is set in substantially the same position as that of the end portion of the gate electrode of the transfer transistor.


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