The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Nov. 02, 2010
Applicants:

Chung Hoon Lee, Ansan-si, KR;

Sum Geun Lee, Ansan-si, KR;

Sang Ki Jin, Ansan-si, KR;

Jin Cheol Shin, Ansan-si, KR;

Jong Kyu Kim, Ansan-si, KR;

SO Ra Lee, Ansan-si, KR;

Inventors:

Chung Hoon Lee, Ansan-si, KR;

Sum Geun Lee, Ansan-si, KR;

Sang Ki Jin, Ansan-si, KR;

Jin Cheol Shin, Ansan-si, KR;

Jong Kyu Kim, Ansan-si, KR;

So Ra Lee, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/46 (2010.01); H01L 33/60 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 33/60 (2013.01); H01L 33/0079 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01);
Abstract

An exemplary embodiment of the present invention discloses a light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.


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