The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Sep. 16, 2009
Martin Strassburg, Tegernheim, DE;
Lutz Höppel, Alteglofsheim, DE;
Matthias Peter, Regensburg, DE;
Ulrich Zehnder, Rettenbach, DE;
Tetsuya Taki, Regensburg, DE;
Andreas Leber, Regensburg, DE;
Rainer Butendeich, Regensburg, DE;
Thomas Bauer, Regensburg, DE;
Martin Strassburg, Tegernheim, DE;
Lutz Höppel, Alteglofsheim, DE;
Matthias Peter, Regensburg, DE;
Ulrich Zehnder, Rettenbach, DE;
Tetsuya Taki, Regensburg, DE;
Andreas Leber, Regensburg, DE;
Rainer Butendeich, Regensburg, DE;
Thomas Bauer, Regensburg, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Abstract
An optoelectronic semiconductor component comprising a semiconductor layer sequence () based on a nitride compound semiconductor and containing an n-doped region (), a p-doped region () and an active zone () arranged between the n-doped region () and the p-doped region () is specified. The p-doped region () comprises a p-type contact layer () composed of InAlGaN where 0≦x≦1, 0≦y≦1 and x+y≦1. The p-type contact layer () adjoins a connection layer () composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer () has first domains () having a Ga-face orientation and second domains () having an N-face orientation at an interface with the connection layer ().