The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Oct. 31, 2013
Applicant:
Fairchild Semiconductor Corporation, San Jose, CA (US);
Inventor:
Martin Domeij, Sollentuna, SE;
Assignee:
Fairchild Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/66 (2006.01); H01L 29/73 (2006.01); H01L 29/40 (2006.01); H01L 29/16 (2006.01); H01L 29/732 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7393 (2013.01); H01L 29/66068 (2013.01); H01L 29/73 (2013.01); H01L 29/402 (2013.01); H01L 29/1608 (2013.01); H01L 29/732 (2013.01);
Abstract
In one general aspect, a silicon carbide (SiC) bipolar junction transistor (BJT) can include a collector region, a base region having an extrinsic part, and an emitter region. The SiC BJT can include a surface passivation layer deposited on the extrinsic part between an emitter contact contacting the emitter region and a base contact contacting the base region. The SiC BJT can also include a surface gate at the surface passivation layer where the surface gate has at least a portion disposed over the extrinsic part of the base region.