The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Jun. 03, 2013
Applicant:

Hannstar Display Corp., New Taipei, TW;

Inventors:

Chia-Hua Yu, New Taipei, TW;

Ming-Chieh Chang, Hsinchu County, TW;

Jung-Fang Chang, Tainan, TW;

Assignee:

Hannstar Display Corp., New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 29/41733 (2013.01); H01L 29/7869 (2013.01);
Abstract

There is provided a semiconductor device including a first conductive layer, an insulating layer, a second conductive layer, a channel layer, a passivation layer and a third conductive layer. The insulating layer covers the first conductive layer. The second conductive layer is formed on the insulating layer and has an inner opening. The channel layer is formed on the inner opening of the second conductive layer to fully cover the inner opening. The passivation layer is formed upon the channel layer to cover the channel layer and has a contact hole inside the inner opening of the second conductive layer. The third conductive layer is formed in the contact hole.


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