The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Apr. 18, 2011
Aya Miki, Kobe, JP;
Yumi Iwanari, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Shinya Morita, Kobe, JP;
Yasuaki Terao, Kobe, JP;
Satoshi Yasuno, Kobe, JP;
Jae Woo Park, Seongnam, KR;
Je Hun Lee, Seoul, KR;
Byung Du Ahn, Hwaseong, KR;
Aya Miki, Kobe, JP;
Yumi Iwanari, Kobe, JP;
Toshihiro Kugimiya, Kobe, JP;
Shinya Morita, Kobe, JP;
Yasuaki Terao, Kobe, JP;
Satoshi Yasuno, Kobe, JP;
Jae Woo Park, Seongnam, KR;
Je Hun Lee, Seoul, KR;
Byung Du Ahn, Hwaseong, KR;
Kobe Steel, Ltd., Kobe-shi, JP;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
Disclosed is an oxide for a semiconductor layer of a thin-film transistor, said oxide being excellent in the switching characteristics of a thin-film transistor, specifically enabling favorable characteristics to be stably obtained even in a region of which the ZnO concentration is high and even after forming a passivation layer and after applying stress. The oxide is used in a semiconductor layer of a thin-film transistor, and the aforementioned oxide contains Zn and Sn, and further contains at least one element selected from group X consisting of Al, Hf, Ta, Ti, Nb, Mg, Ga, and the rare-earth elements.