The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Dec. 14, 2010
Nelson Tansu, Bethlehem, PA (US);
Hongping Zhao, Bethlehem, PA (US);
Guangyu Liu, Bethlehem, PA (US);
Ronald Arif, Bethlehem, PA (US);
Nelson Tansu, Bethlehem, PA (US);
Hongping Zhao, Bethlehem, PA (US);
Guangyu Liu, Bethlehem, PA (US);
Ronald Arif, Bethlehem, PA (US);
Lehigh Univeristy, Bethlehem, PA (US);
Abstract
A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 Å and 24 Å thick, respectively.