The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Jan. 31, 2013
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Sung-Won Hwang, Gyeonggi-do, KR;

Geun-Woo Ko, Geyonggi-Do, KR;

Sung-Hyun Sim, Seoul, KR;

Jung-Sub Kim, Gyeonggi-do, KR;

Hun-Jae Chung, Gyeonggi-do, KR;

Cheol-Soo Sone, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 33/14 (2010.01); H01L 33/04 (2010.01); B82Y 99/00 (2011.01); B82Y 10/00 (2011.01); B82Y 20/00 (2011.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/04 (2013.01); B82Y 99/00 (2013.01); B82Y 10/00 (2013.01); B82Y 20/00 (2013.01); H01L 33/14 (2013.01); Y10S 977/734 (2013.01); H01L 33/20 (2013.01);
Abstract

An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance.


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