The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Sep. 03, 2013
Applicant:

Ps4 Luxco S.a.r.l., Luxembourg, LU;

Inventor:

Katsuhiko Tanaka, Tokyo, JP;

Assignee:

PS4 Luxco S.a.r.l., Luxembourg, LU;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); C23C 14/04 (2006.01); C23C 14/34 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76838 (2013.01); H01L 21/76814 (2013.01); H01L 21/76882 (2013.01); C23C 14/046 (2013.01); C23C 14/345 (2013.01); H01L 21/76858 (2013.01); C23C 14/3492 (2013.01); H01L 21/76876 (2013.01); H01L 21/2855 (2013.01);
Abstract

A method of manufacturing a semiconductor device comprises forming a contact hole within an interlayer insulating film of a substrate and forming a contact plug while the substrate is heated. In forming the contact plug, the substrate is held on a stage within the chamber of a sputtering apparatus through a chuck, and an ESC voltage applied to the chuck is increased stepwise in a plurality of steps. First target power is applied to a target within the chamber to form a first Al film in the contact hole. Next, second target power higher than the first target power is applied to the target within the chamber to form a second Al film on the first Al film.


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