The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Oct. 05, 2013
Cornell University, Ithaca, NY (US);
Jiwoong Park, Ithaca, NY (US);
Mark Levendorf, Mansfield, OH (US);
Cheol-Joo Kim, Ithaca, NY (US);
Lola Brown, Ithaca, NY (US);
Cornell University, Ithaca, NY (US);
Abstract
Certain embodiments of the present invention include a versatile and scalable process, 'patterned regrowth,' that allows for the spatially controlled synthesis of lateral junctions between electrically conductive graphene and insulating h-BN, as well as between intrinsic and substitutionally doped graphene. The resulting films form mechanically continuous sheets across these heterojunctions. These embodiments represent an element of developing atomically thin integrated circuitry and enable the fabrication of electrically isolated active and passive elements embedded in continuous, one atom thick sheets, which may be manipulated and stacked to form complex devices at the ultimate thickness limit.