The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Nov. 29, 2010
Applicant:

Miguel E. Urteaga, Moorpark, CA (US);

Inventor:

Miguel E. Urteaga, Moorpark, CA (US);

Assignee:

Teledyne Scientific & Imaging, LLC, Thousand Oaks, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01); H01L 21/8252 (2006.01); H01L 27/06 (2006.01); H01L 29/08 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8252 (2013.01); H01L 27/0605 (2013.01); H01L 29/0821 (2013.01); H01L 29/7371 (2013.01);
Abstract

The present invention may provide an integrated device, which may include a substrate having first and second regions, the first region spaced apart from the second region, a first heterojunction bipolar transistor (HBT) device formed on the first region of the substrate, the first HBT device having a first collector layer formed above the first region of the substrate, the first collector layer having a first collector thickness and a first collector doping level, and a second HBT device formed on the second region of the substrate, the second HBT device having a second collector layer formed above the second region of the substrate, the second collector layer having a second collector thickness and a second collector doping level, the second collector thickness substantially greater than the first collector thickness, the second collector doping level lower than the first collector doping level.


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